any changing of specification will not be informed individual PZT159 pnp silicon planar r o h s c o m p l i a n t p r o d u c t http://www.secosgmbh.com elektronische bauelemente features * 5 amps continuous current, up to 15 amp peak current. * excellent gain characteristic specified up to 10amps. * very low saturation voltage mechanical data case: sot-223 plastic package weight: approx. 0.021g marking code: 159 01 -jun-2002 rev. a page 1 of 2 s electrical characteristic parameter symbol min typ. max uni test conditions collector - base breakdown v oltage bv cbo - 100 - - v i c = - 100 m a, i e =0 collector - emitter breakdown voltage (w/ real device limit) bv cer - 100 - - v i c = - 1 m a, r b =1k w collector - emitter breakdown voltage *bv ceo - 60 - - v i c = - 100ma, i b =0 emitter - base breakdown voltage bv ebo - 6 - - v i e = - 100 m a, i c =0 collector - base cutoff current i cbo - - - 50 na v cb = - 80v, i e =0 collector - base cutoff current (w/ real device limit) i cer - - - 50 na v cb = - 80v, r =1k w emitter - base cutof f current i ebo - - - 10 na v eb = - 6v, i c =0 collector saturation voltage 1 *v ce (sat)1 - - 20 - 50 mv i c = - 100ma, i b = - 10ma collector saturation voltage 2 *v ce (sat)2 - - 85 - 140 mv i c = - 1a, i b = - 100ma collector saturation voltage 3 *v ce (sat)3 - - 155 - 210 mv i c = - 2a, i b = - 200ma collector saturation voltage 4 *v ce (sat)4 - - 370 - 460 mv i c = - 5a, i b = - 500ma base saturation voltage *v be (sat) - - 1.08 - 1.24 v i c = - 5a, i b = - 500ma base - emitter voltage *v be (on) - - 0.935 - 1.07 v v ce = - 1 v, i c = - 5a dc current gain 1 *h fe 1 100 200 - v ce = - 1 v, i c = - 10ma dc current gain 2 *h fe 2 100 200 300 v ce = - 1 v, i c = - 2a dc current gain 3 *h fe 3 75 90 - v ce = - 1 v, i c = - 5a dc current gain 4 *h fe 4 10 25 - v ce = - 1 v, i c = - 1 0 a gain - bandwidth product ft - 120 - mh v ce = - 10 v, i c = - 10 0 ma, output capacit ance c ob - 74 - pf v cb = - 10 v, i e =0 , f=1mhz (t j = 25 o c unless otherwise noted) high current transistor b c e c so t - 223 f f f 0 . 3 0 0 . 0 3 12 0. 25 12 1 3 6 0. 9 50.05 r0 .15 r0 .1 5 0.55 1 1 2 3 1 . base 1 . 6 ?0. 2 3.56 maxi m junction temperature um ratings and thermal characteristics p arameter symbol v alue unit collector-emitter v oltage v ceo - 60 v collector-base v oltage v cbo - 100 v emitter-base v oltage v ebo -6 v collector current (dc) i c - 5 total p o w er dissipation p d w 3.0 sto r age t empe r ature t stg -5 5 to +150 notes: device on alumina substrate. a a collector current (pulse) i c -15 (t a = 25 o c unless otherwise noted) - 2 . co ll ec t or 3 . emitter t j +150 o o c c
any changing of specification will not be informed individual PZT159 pnp silicon planar on - time t on - 82 - off - time toff - 350 - ns v cc = - 10 v, i c = 2a, i b1 =i b2 = - 200ma 01 -jun-2002 rev. a page 2 of 2 http://www.secosgmbh.com elektronische bauelemente high current transistor *measured under pulse condition. pulse width 300 s, duty cycle 2% spice parameter data is available upon request for this device.
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